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  7. Temperature-Dependent AC/DC Hall Measurement System LorentX
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Temperature-Dependent AC/DC Hall Measurement System LorentX

The LorentX system integrates Hall effect measurement, a temperature-controlled cryostat, and an external magnetic field. It enables precise characterization of semiconductor materials and thin films—including resistivity, carrier concentration, magnetoresistance, Hall coefficient, and mobility—under varying temperature conditions. The system supports coupling with liquid nitrogen and liquid helium cryostats for accurate temperature control and measurement across different temperature ranges.

Temperature-Dependent AC/DC Hall Measurement System LorentX

Product Detail

Key Features

Integrated design combining Hall effect measurement, variable-temperature cryostat, and external magnet

Accurate measurement of resistivity, carrier concentration, magnetoresistance, Hall coefficient, and mobility under variable temperatures

Supports liquid nitrogen and liquid helium cryostat coupling for precise temperature control and measurement across different ranges


Specifications

Bulk and surface carrier concentration

Carrier mobility

Hall coefficient

Resistivity and sheet resistance

Magnetoresistance

Resistivity anisotropy ratio

Optional temperature-dependent measurement: variation of the above parameters with temperature


Product Series

LRX-D5500 DC Hall Measurement System: Classic design, stable and reliable, ideal for fast mobility and carrier concentration measurement of conventional materials.

LRX-A5500 AC Hall Measurement System: Breakthrough technology that reduces thermal effects and noise interference, especially suitable for accurate characterization of low-mobility and high-resistivity materials.

LX-DA5500 AC/DC Hall Measurement System: 2-in-1 multifunctional design offering both DC and AC measurement modes to meet complex experimental requirements and enable full material characterization.


Applications

Doped organic semiconductors (P-type and N-type)

Semiconductor thin films such as Si, SiGe, SiC, GaAs, InGaAs, InP, GaN, AlZnO, FeCdTe, ZnO, TCO (including ITO), both P-type and N-type

Radical materials

Intrinsic semiconductors, low-mobility semiconductors, MOF, COF, 2D semiconductors, and other emerging materials


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Product Detail

Key Features

Integrated design combining Hall effect measurement, variable-temperature cryostat, and external magnet

Accurate measurement of resistivity, carrier concentration, magnetoresistance, Hall coefficient, and mobility under variable temperatures

Supports liquid nitrogen and liquid helium cryostat coupling for precise temperature control and measurement across different ranges


Specifications

Bulk and surface carrier concentration

Carrier mobility

Hall coefficient

Resistivity and sheet resistance

Magnetoresistance

Resistivity anisotropy ratio

Optional temperature-dependent measurement: variation of the above parameters with temperature


Product Series

LRX-D5500 DC Hall Measurement System: Classic design, stable and reliable, ideal for fast mobility and carrier concentration measurement of conventional materials.

LRX-A5500 AC Hall Measurement System: Breakthrough technology that reduces thermal effects and noise interference, especially suitable for accurate characterization of low-mobility and high-resistivity materials.

LX-DA5500 AC/DC Hall Measurement System: 2-in-1 multifunctional design offering both DC and AC measurement modes to meet complex experimental requirements and enable full material characterization.


Applications

Doped organic semiconductors (P-type and N-type)

Semiconductor thin films such as Si, SiGe, SiC, GaAs, InGaAs, InP, GaN, AlZnO, FeCdTe, ZnO, TCO (including ITO), both P-type and N-type

Radical materials

Intrinsic semiconductors, low-mobility semiconductors, MOF, COF, 2D semiconductors, and other emerging materials


Temperature-Dependent AC/DC Hall Measurement System LorentX
The LorentX system integrates Hall effect measurement, a temperature-controlled cryostat, and an external magnetic field. It enables precise characterization of semiconductor materials and thin films—including resistivity, carrier concentration, magnetoresistance, Hall coefficient, and mobility—under varying temperature conditions. The system supports coupling with liquid nitrogen and liquid helium cryostats for accurate temperature control and measurement across different temperature ranges.
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