Description
First introduced as a custom-built system in 2012, FlyTOF was relaunched in 2019 as the industry's first automated, integrated commercial TOF mobility measurement system.
Built on the MagicBox mainframe and equipped with intuitive control and data acquisition software, FlyTOF enables fast and accurate measurements. The TOF method directly derives mobility from its physical definition—the average drift velocity of carriers per unit electric field—and is widely regarded as providing the 'true' mobility compared to indirect methods such as space-charge-limited current (SCLC). Analysis of TOF transient photocurrent signals yields electron mobility, hole mobility, and, when combined with material-specific models, parameters such as impurity concentration, defect density, band disorder, and charge hopping distance.
As a pioneer in commercializing TOF mobility measurements, Oriental Spectra has validated FlyTOF across organic semiconductors, silicon-based materials, perovskites, 2D materials, and COFs.
Key Features
Covers mobility range from 10⁻⁹ to 10⁶ cm²/(V·s)
Industry's first highly integrated and automated commercial TOF system
Electron and hole mobility measurement
Lateral/surface electron and hole mobility measurement
2D carrier imaging (mapping)
Based on TOF transient photocurrent
Professional signal conditioning with low EMI
State-of-the-art TOF measurement capabilities
Software-controlled automation for fast and convenient testing
Fast sample exchange; inert gas atmosphere compatible
Wide-range temperature-dependent measurement (optional)
Visual system for laser spot monitoring
Flexible coupling with various excitation light sources
Measurement Functions
TOF transient photocurrent measurement
Electron mobility measurement of semiconductor materials
Hole mobility measurement of semiconductor materials
Carrier concentration measurement
Carrier lifetime measurement
Temperature-dependent measurement (optional)
Lateral-TOF measurement (optional, with accessories)
TOF 2D mapping (optional, with accessories)
Functional Description
Standard configuration: Vertical TOF
Mapping function: 2D imaging of TOF signals
Lateral-TOF function: Horizontal mobility measurement
Applications
Organic semiconductors
Quantum dot semiconductors
Elemental semiconductors (Si, Ge, etc.)
Metal-organic frameworks (MOFs)
2D materials
Wide-bandgap third-generation semiconductors
Perovskite materials
Compound semiconductors (InGaAs, etc.)
Covalent organic frameworks (COFs)
Other semiconductor materials
Specifications and Model
| Specifications & Configuration | High-Performance Version (E300) | Standard Version (S300) | Economy Version (W300) |
| Standard TOF Functionality | √ | √ | √ |
| Mapping Module | Optional | Optional | × |
| Lateral-TOF | Optional | Optional | × |
| ● Lateral-TOF： Includes a microscope system, probe system, optical path and electronic components for Lateral-TOF, etc. This configuration is non-standard. Please contact our sales representative for details. ● Optional Configurations / Components: 337 nm nanosecond gas laser; 532 nm nanosecond Q-switched solid-state laser; 355 nm nanosecond Q-switched solid-state laser; Nd:YAG laser (1064 nm, 532 nm, 355 nm, 266 nm); Tunable OPO laser, wavelength range: 210–2400 nm. |
