Product Keywords: Ramp voltage current test (RAMP-IV), Step voltage current test (STEP-IV), Pulse voltage current test (Pulse-IV), switching transient photocurrent (on-off TPC), switching transient photovoltage (on-off) TPV), Dark injection transient Characteristic test (DIT), Deep level transient spectrum (DLTS), dark state linear boost charge extraction test (Dark-CELIV), light state linear boost charge extraction test (Photo-CELIV), charge extraction test (CE), impedance spectrum test (IS), capacitor voltage test (CV), intensity modulation Photocurrent spectrum (IMPS), Intensity modulated Photocurrent Spectrum (IMPS), Intensity modulated Photocurrent Spectrum (IMPS), transient characteristics of optoelectronic devices (time/frequency domain testing), electroemission spectrum (ELS)
▌ Product introduction
UltraTran is an instrument that integrates multiple optoelectronic test functions to accurately measure the electrical and optoelectronic properties of semiconductor materials and devices, especially for light emitting (OLED, PeLED, etc.) and photovoltaic devices (OPV, crystalline silicon PV, heterojunction laminated PV, etc.). The core functions of the device include:
1) Ramp voltage current test (RAMP-IV), Step voltage current test (STEP-IV) and Pulse voltage current test (Pulse-IV). These test modes enable the user to scan the sample with different electrical excitation modes to obtain information about the electrical properties of the sample under different excitation. Ramp-IV provides voltage scanning in a continuous manner and is suitable for capturing consistent changes in material response; Step-iv provides voltage in a Step by step way, which is suitable for observing the steady-state behavior of materials under different voltage steps. Pulse-iv allows the study of the dynamic IV characteristics of the device through the short-time voltage Pulse, and can also effectively reduce the thermal resistance of the device and increase the maximum injection current of the device.
2) UltraTran also provides switching transient photocurrent (on-off TPC) and switching transient photovoltage (on-off TPV) tests, which are suitable for studying the rise and fall process of materials under light excitation [transient photocurrent/photovoltage/photocharge test refer to our TranPVC products].
3) Dark Injection Transient Characteristics Test (DIT) and Deep level transient spectra (DLTS) are used to detect and analyze trap and defect states in semiconductors. DLTS technology is particularly good at identifying and quantifying the concentration of tiny defects in materials, providing critical information for improving the quality of semiconductor materials.
4) The device also supports Dark state linear supercharged charge extraction test (dark-CELIV) and light state linear supercharged charge extraction test (Photo-CELIV), which can determine the charge transfer and recombination mechanism in the semiconductor, and obtain parameters such as mobility.
5) Equivalent charge extraction test (CE), which can study the charge concentration of the device.
6) Functions such as impedance spectrum testing (IS) and Capacitance voltage testing (CV) add an extra dimension to the device, allowing it to fully assess the impedance and dielectric properties of the material.
7) Intensity modulated photocurrent spectroscopy (IMPS) and intensity modulated photovoltage spectroscopy (IMVS) provide researchers with a unique way to explore the frequency response of materials to changes in light intensity, which is particularly important for photovoltaic materials and applications.
8) Electroemission spectroscopy (ELS) is used to study the electroluminescence characteristics of materials and obtain parameters such as spectrum and color coordinates.
▌ Test function
□ Ramp voltage and current test (RAMP-IV);
□ Step voltage and current test (STEP-IV);
□ Pulse voltage and current test (PULSE-IV);
□ Switch transient photocurrent (on-off TPC);
□ Switch transient optical voltage (on-off TPV);
□ Deep Level transient Spectrum (DLTS);
□ Dark injection transient characteristics test (DIT);
□ Dark state linear charge extraction test (DARK-CELIV);
□ Optical linear supercharged charge Extraction test (Photo-CELIV);
□ Charge extraction test (CE);
□ Impedance spectrum test (IS);
□ Capacitor voltage test (CV);
□ Intensity modulated photocurrent spectrum (IMPS);
□ Intensity modulated photovoltage spectrum (IMVS);
□Electroemission spectroscopy (ELS).
▌ Product application
Semiconductors: organic semiconductors, metal-organic frames, covalent organic frames, perovskite materials, two-dimensional materials, elemental semiconductors (Si, Ge, etc.), compound semiconducting (InGaAs, etc.), wide-band gap third-generation semiconductors, quantum dot semiconductors, other semiconductor materials;
□ Photovoltaic material devices;
□ Light-emitting material devices;
□ Photocatalytic material devices.
▌ Function module
Multifunctional optoelectronic device tester UltraTran |
Feature | Standard or not | Electro-optical conversion device optional | Photoelectric conversion device optional |
Ramp Voltage and Current Testing (RAMP-IV) | ● |
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Step Voltage and Current Test (STEP-IV) | ● |
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Pulse Voltage and Current Test (PULSE-IV) | ● |
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Switching transient photocurrent (on-off TPC) | × |
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Switching transient optical voltage (on-off TPV) | × |
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Dark Injection Transient Characteristics Test (DIT) | ● |
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Deep level transient Spectra (DLTS) | ● |
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Dark state linear Charge Extraction Test (DARK-CELIV) | ● |
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Optical linear supercharged Charge Extraction Test (Photo-CELIV) | × | ● | ● |
Charge Extraction Test (CE) | × | ● |
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Impedance Spectrum Test (IS) | ● |
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Capacitance Voltage Test (CV) | ● |
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Intensity modulated photocurrent spectroscopy (IMPS) | × |
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Intensity modulated photovoltage spectrum (IMVS) | × |
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Electroemission spectroscopy (ELS) | × | ● |
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Performance parameter |
Sampling rate | 250MS/s |
Time resolution | 5ns |
Frequency range | 10 mHz to 10 MHz |
Voltage range | ±12V |
Current range | 0~100 mA |
Minimum current resolution | ≤100pA |
Photoelectric detection module | Wavelength range: 350nm-1100nm; Rise time: 14ns. |
LED light source module | Color temperature: 6500K; Wavelength range: 400nm-700nm; |
Variable temperature module | Liquid nitrogen cryostat and liquid helium cryostat are configured according to requirements |
