Product keywords: solar cell energy loss, Voc loss, energy-loss, Voc loss, solar cell Voc loss, absolute luminescence quantum yield measurement system, solar cell open voltage (Voc) loss measurement instrument, loss of photon energy, thermodynamic loss, radiation loss, non-radiation loss
▌ Product introduction
It first provided the industry with a built-up system in 2012 and launched the industry's first automated, integrated time-of-flight mobility measurement commercial device in 2019.
FlyTOF time-of-flight mobility measurement instrument is an important member of HiTran transient integrated photoelectric characteristic measurement platform of Oriental Spectra Technology. The system uses time-of-flight (TOF) method to measure the mobility of semiconductor materials and related photoelectric properties, and is widely used in various semiconductor materials. Such as silicon-based semiconductors, second-generation semiconductors, third-generation wide-band gap semiconductors, organic semiconductors, perovskite semiconductors, quantum dot semiconductors, two-dimensional materials semiconductors, metal-organic frameworks (MOF), covalent organic frameworks (COF), etc. FlyTOF is based on our MagicBox mainframe, equipped with convenient upper computer control and data measurement software, which can help customers to make fast and accurate measurements. FlyTOF is the first automated and integrated time-of-flight mobility test commercial device in the industry.
The transfer property is one of the most basic properties of semiconductor, which is the basis of semiconductor application in the field of electronics and optoelectronics. The mobility of a semiconductor is defined as the average drift speed of the carrier in a unit electric field. TOF mobility testing methods are directly developed from the definition of mobility. Compared with some indirect mobility measurement methods, such as space charge limited current (SCLC) method, TOF method is considered to be the closest to the "real" mobility measurement method. By analyzing the transient photocurrent signal of TOF, electron mobility, hole mobility and other parameters can be obtained. Users can also use these data, combined with the physical model of the material for analysis, to obtain impurities concentration, defects, energy band confusion, charge jump distance and other parameters.
As a pioneer in the commercial application of TOF mobility testing methods, Oriental Spectra has worked with customers to explore the application of FlyTOF in organic semiconductors, silicon-based semiconductors, perovskite semiconductors, two-dimensional materials, covalent organic frameworks and other fields. We look forward to working with you to explore more application areas of FlyTOF.
▌ Product characteristics
□ Carrier mobility measurements covering 10^-9~10^6 cm^2/(V.s)
□ Professional signal adjustment, electromagnetic compatibility noise is small
□ Industry's most advanced TOF test function
□ Software automatic control, quick and convenient test
□ Quick change device, inert gas atmosphere test
□ Can achieve wide temperature range of variable temperature test (optional)
□ Spot irradiation can be seen through the visualization system
□ Flexible coupling of various types of excitation light sources
▌ Product function
□ Time-of-flight transient photocurrent measurement
□ Measurement of electronic mobility of semiconductor materials
□ Measurement of hole mobility of semiconductor materials
□ Carrier concentration measurement
□ Carrier life measurement
□ Optional variable temperature measurement
□ Optional Lateral-TOF test function and accessories
□ Optional TOF 2D scanning (mapping) function and accessories
Function description:
Standard TOF: Vertical TOF;
Mapping function: It can image the TOF signal in two-dimensional plane;
Lateral-TOF function: The mobility of the sample can be tested in a horizontal manner.
▌ Product application
| □ Organic semiconductor | □ Quantum dot semiconductor | □ Elemental semiconductors (Si, Ge, etc.) | □ Metal-organic Framework (MOF) | □ Two-dimensional material |
| □ Wide-band gap third generation semiconductor | □ Perovskite materials | □ Compound semiconductors (InGaAs, etc.) | □ Covalent Organic Frame (COF) | □ Other semiconductor materials |
▌ Specification and model
Specification configuration | High Performance Version (E300) | Standard Version (S300) | Economy Edition (W300) |
TOF standard features | √ | √ | √ |
Mapping module | selectable | selectable | × |
Lateral-TOF | selectable | selectable | × |
* Lateral-TOF：
□ Includes microscopic system, probe system, optical path for Lateral-TOF and electronic component system, etc., with non-standard nature, please contact sales specialist for details. * Optional configuration/parts: □ 337nm nanosecond gas laser; □ 532nm nanosecond Q-switched solid-state laser; □ 355 nm nanosecond Q-switched solid-state laser; □ Nd:YAG laser 1064 nm, 532 nm, 355 nm, 266 nm; □ Tunable OPO laser, wavelength range: 210-2400 nm.
|
